Design of a new MagFET-based Integrated Current Sensor Robust to EMI
نویسندگان
چکیده
− This paper deals with the susceptibility to electromagnetic interference of CMOS integrated current sensors for power transistor current monitoring. Conventional integrated solution are first considered, hence a new integrated current sensor based on the Hall effect in a split-drain MOS transistors (MagFET) is proposed. The susceptibility to radio frequency interference of a conventional (wired) current sensor and that of the MagFET-based solution is discussed.
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تاریخ انتشار 2015